? semiconductor components industries, llc, 2012 june, 2012 ? rev. 0 1 publication order number: ntsv30100s/d NTSV30100SG very low forward voltage trench-based schottky rectifier exceptionally low v f = 0.41 v at i f = 5 a features ? fine lithography trench ? based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? these devices are pb ? free, halide free and are rohs compliant typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc ? dc converters ? freewheeling and or ? ing diodes ? reverse battery protection ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets flammability rating ul 94 ? 0 @ 0.125 in ? weight (approximately): 1.9 grams ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c maximum for 10 sec 1 3 2, 4 http://onsemi.com to ? 220ab case 221a style 3 3 4 1 2 marking diagram ayww tsv30100sg aka a = assembly location y = year ww = work week g = pb ? free package aka = polarity designator device package shipping ? ordering information NTSV30100SG to ? 220 (pb ? free/ halide ? free) 50 units/rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d.
NTSV30100SG http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r , t c = 105 c) i f(av) 30 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 95 c) i frm 60 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a operating junction temperature t j ? 40 to +150 c storage temperature t stg ? 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics rating symbol value unit maximum thermal resistance junction ? to ? case junction ? to ? ambient r jc r ja 2.0 70 c/w c/w electrical characteristics rating symbol typ max unit maximum instantaneous forward voltage (note 1) (i f = 5 a, t j = 25 c) (i f = 10 a, t j = 25 c) (i f = 30 a, t j = 25 c) (i f = 5 a, t j = 125 c) (i f = 10 a, t j = 125 c) (i f = 30 a, t j = 125 c) v f 0.47 0.57 0.915 0.41 0.54 0.78 ? ? 1.1 ? ? 0.85 v maximum instantaneous reverse current (note 1) (v r = 70 v, t j = 25 c) (v r = 70 v, t j = 125 c) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 12 11 55 27 1000 60 a ma a ma 1. pulse test: pulse width = 300 s, duty cycle 2.0%
NTSV30100SG http://onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) t a = 150 c t a = 25 c t a = 125 c figure 2. typical reverse characteristics 0.001 0.01 0.1 1 10 100 1000 20 30 40 50 60 70 80 90 100 v r , instantaneous reverse voltage (v) i r , instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 125 c figure 3. typical junction capacitance 100 1000 10000 0.1 1 10 100 v r , reverse voltage (v) c, junction capacitance (pf) t j = 25 c figure 4. current derating, case 0 5 10 15 20 25 30 35 40 45 50 55 60 0 20 40 60 80 100 120 140 t c , case temperature ( c) square wave dc r jc = 1.3 c/w i f(av) , average forward cur- rent (a) figure 5. forward power dissipation 0 5 10 15 20 25 30 35 40 45 024681012 i f(av) , average forward current (a) p f(av) , average forward power dissipation (w) square wave dc t a = 150 c i pk /i av = 5 i pk /i av = 10 i pk /i av = 20 14 16 18 20
NTSV30100SG http://onsemi.com 4 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w) figure 6. typical transient thermal response, junction ? to ? case
NTSV30100SG http://onsemi.com 5 package dimensions to ? 220 case 221a ? 09 issue ag notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 3: pin 1. cathode 2. anode 3. gate 4. anode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.036 0.64 0.91 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntsv30100s/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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